Перегляд за автором "Grinyov, B."

Сортувати за: Порядок: Результатів:

  • Energy characteristics of scintillators for X-ray introscop 
    Ryzhikov, V.; Starzhinskiy, N.; Katrunov, K.; Grinyov, B.; Nekrasov, V.; Silin, V.; Spasov, V.; Galich, Yu.; Verbitskiy, O.; Zenya, I. (Functional Materials, 2004)
    In a broad energy range of X-ray radiation (U = 2 175 kV), we have studied output characteristics (light output, quantum yield of luminescence, etc.) of scintillators based on ZnSe crystals, as well as scintillators ...
  • Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals 
    Galenin, E.; Biatov, M.; Gerasymov, I.; Grinyov, B.; Sidletskiy, O.; Baranov, V.; Budagov, J.; Davydov, Yu.; Glagolev, V. (Functional Materials, 2015)
    A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation ...
  • On luminescence kinetics of scintillators used in X-ray introscopy systems 
    Ryzhikov, V.; Starzhinskiy, N.; Seminozhenko, V.; Grinyov, B.; Nagornaya, L.; Spasov, V.; Katrunov, K.; Zenya, I.; Vyagin, O. (Functional Materials, 2004)
    Data are presented on the influence of various factors upon luminescence kinetics of scintillator crystals based on activated ZnSe, Csl, CWO and GSO. It is shown that the isovalent dopant type substantially affects the ...
  • On radiation-induced optical and luminescence phenomena in thermally pretreated GSO:Ce crystals 
    Nagornaya, L.; Starzhinskiy, N.; Bondar, V.; Grinyov, B.; Katrunov, K.; Loseva, E.; Onishchenko, G.; Ryzhikov, V.; Semynozhenko, V. (Functional Materials, 2005)
    Effects of thermal annealing in different gaseous media (vacuum, oxygen-containing and reductive atmospheres) upon main optical, luminescence, spectral kinetic, and scintillation characteristics of GSO:Се crystals - both ...
  • Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors 
    Katrunov, K.; Starzhinskiy, N.; Grinyov, B.; Galchinetskii, L.; Bendeberya, G.; Bondarenko, E. (Functional Materials, 2008)
    Data on optical and electrophysical properties of photosensitive structures with Schottky barrier of nZnSe(O, Te)/Ni type are presented. The photoreceivers of this type have current sensitivity Sλ = 0.1-0.15 A/W for λ = ...